장비

전체게시물 총 60건

장비

장비이름: [Diffusion]RTA
? Temperature Repeatability: < +-2C @ 400~1000C
? Ramp-up Rate: > 150C/sec @400~1000C
? Ramp-down Rate: >70C/sec @800~1200C
? Gas Flow: N2 O2 Ar H2
? Chamber Heating: 150~1100C
? Vacuum Capacity: 10-7Torr (실제:10-3Torr)
? Interlock to prevent hazardous mixing of gases

제작사 AP시스템
모델명 RTP 601S
도입연도 2005-03-01
용도 대기 및 진공중에서 할로겐램프를 이용하여 웨이퍼를 급속가열 반도체 소자의 어닐링 공정 및 열처리 공정에 의한 실리콘 기판의 산화와 질화막 형성

장비이름: [Diffusion]RTA
? wafer size : Pieces ~ 6 inch
? Heating 텅스텐-할로겐 램프 사용
? 온도 측정 : T/C & pyrometer.
? SiC Suscepter 사용
? 온도 대역 : 200 ~ 1000 °C (T/C)

장비이름: [Cleaning]Spin Dryer
? Wafer size : 2, 4, 5, 6 inch
? RPM Range : 0 ~ 3500 (공정별 Step 제어)
? Exhaust : PVC 40A
? Drain : PVC PIPE 32A
? N2 Supply : 3/8“ SUS316L tube
? DI Supply : 1 ~ 7 LPM
? System specifications
- Capacity : 1 Wafer carrier up to 6“
- Outer Dimensions (Rinse/Dryer) : 18.87“ Wide * 26.25” deep * 20.50“ high
- Bowl Dimension : 11.25“ ID by 9.31” Deep
- DI nozzels : 6
- Drain : 1.5“ NPT
- Rinse Cycle : 0 to 3200 RPM
- Dry Cycle : 0 to 3200 RPM
- Rinse Timer : 0 to 9999 Seconds
- Rinse Timer : 0 to 9999 Seconds
? DI Water : 1.75 gpm 25psi (3/8“)
? DI Return : 5 psi (3/8“)
? System N2 : 3.0 ~ 4.0 cfm
? Electrical : 15AMP 120VAC 50/60Hz

장비이름: [Lithography]PR Asher (Low Pressure Plasm System)
? Plasma excitation frequency: Microwave (2.45 GHz)
? Plasma power: 50-300 W
? Gas inlets with mass-flow-controller: 1 channel
? Power supply: 230 V, 50/60 Hz
? Power input (without vacuum pump): 0.5 kVA
? Vacuum gauge: Pirani
? Weight: 100 k

장비이름: [Lithography]Mask Aligner
? Alignment Mode : Manual
? Alignment Accuracy : top-side?1um, bottom-side?2um
? Print mode : Proximity & Contact, soft contact, hard contact, low vacuum & vacuum contact
? Wavelength : 365 nm
? Microscope Magnification : 5x
? Resolution : 1 um
? Possible Mask : 4-6 inch mask

장비이름: [Measurement & Analysis]4-Point Probe System
? Sheet resistance measurement
- Measuring method : Contacted by 4-point probe
- Measuring range : 1 mohm/sq ∼ 2 Mohm/sq
- Measuring point : Center 1 point
? Resistivity measurement
- Measuring method : Contacted by 4-point probe (Input thickness)
- Measuring range : 10.0 μohm·cm ∼ 200.0 kohm·cm (VLSI standard wafer)
- Measuring point : Center 1 point
? Current source
- 10nA to 100mA
- DVM 0V to 2,000mV
? Measurement accuracy
- ±0.5 % (Precision resistor)
? JANDEL 4-point probe
- Pin spacing : 20 mils ∼ 50 mils
- Pin load : 10 gram/pin ∼ 250 gram/pin
- Pin radius : 12.5 micron ~ 500 micron