? S-parameter measurement
- Device : Compound device CMOS 3-port device
- Frequency available : ≥60GHz 100GHz upgradable
? Measurement in frequency and time domain
? DC parameter analyzing (-1A)
? Noise figure measure and modeling (~ 26GHz)
? Dynamic range : ≥70dB @ 5GHz
? Phase noise : -70dB @ 10GHz (10GHz offset)
? Noise floor : ≤-95dBm @ 5GHz

Back grinding 구성
-OP & Data base control 15" industry touch PC
-Motion Control PC PIC PC104
-PC 18-bit Dual DAC for high Precision Control 1
(AB phase analog communication)
-40Mhz MOTOROLA DPS56311을 적용한 High speed controller
-Wafer size ; 2” ~ 8”

주요사양 및 특징
1) Wafer size : 2" to 6"
2) 적용제품 : silicon wafer glass sapphire LED LCD MEMS ceramic GaN GaAs zirconia
3) 고분해능 정밀급 제어
4) 반자동 다이싱 시스템
5) 운영시스템 : 산업용 판넬 터치컴퓨터 + 구동 컴퓨터(PMAC)
산업용 컴퓨터 : 기계운영 + 데이터Data Base Motion PC : Motion control
6) 웨이퍼 마운트(Wafer mount) : Wafer size : 2" to 6"
다이싱 하기 전 다이싱 프레임과 필름에 접착 하는 장치
롤러 쿠션장치 웨이퍼 쿠션장치 척 진공 장치 필름롤러 자동 그리퍼 장치
7) 확장기(Expander)
다이싱 완료후 & 스크라이버 브레이킹 완료후 테이프를 당겨서 칩간의 거리를 확장하는 장치

Lapping/Polishing
-공작물의 표면과 랩 과의 사이에 랩재나 공작액을 가하여 공작물 표면의 조도를 일정하게 하여 거울과 같은 면을 얻는 장치
-2~4단의 속도가변 영역을 설정하여 단일회전속도 설정에서 해낼 수 없었던 표면조도 형성
-Wafer size ; 2” ~ 8”

특징
Quarter 2 4 Porous Vaccum Microscope x0.8 ~ x5zoom Air Pulse 하중인가방식
1) Wafer table
- Size: Diameter 110mm (Porous Vacuum 100mm)
- Parallelism: ±10μm/100m
2) X-axis (Direction of pitch sending)
- Driving Method: Pulse motor & Lead screw
- Stroke: 0~100mm
- Resolution: 0.1μm
3) Y-axis (Work direction)
- Driving Method: AC Motor & Crankshaft
- Stroke: 25~110mm (Fixation within this range)
- Speed: 0~100mm/sec
4) Z-axis
- Driving Method: Pulse motor & Lead screw
- Stroke: 0~15mm
- Resolution: 1μm
5) θ -axis
- Driving Method: AC Motor & Timing Belt
- Operation Range: ±360°
- Resolution: 0.1°
6) Load axis
- Driving Method: Electrical Air Regulator & Air Cylinder
- Operation Range: 0~200g
- Resolution: Appro x 1g
7) Camera axis
- Driving Method: Pulse Motor & Ball Screw
- Operation Range: 0~99mm
8) Manual setting
- X-axis (Feeding Direction): Fine Adjustment
- Scribing Angle: ±3°

? Electron Optics
-Electron column : TriglavTM
-Electron Gun : High brightness Schottky emitter
-Resolution : 0.6 nm at 15 keV (In Beam SE), 0.9 nm at 1 keV (BD mode)
-Probe Current : < 2 pA to 400 nA
-Electron Beam Energy : 50 eV to 30 keV
? Chamber
-Dimensions : Internal dimensions: 340 mm (width) x 315 mm (depth),
-Door: 340 mm (width) x 320 mm (height)
-Chamber Vacuum: High vacuum : < 9 ×10-3 Pa
-SEM Gun Vacuum: < 3 x 10-7 Pa
-pumping time after specimen exchange typically < 3,5 minutes
-Stage Movements : X = 130 mm (- 65 mm to + 65 mm), Y = 130 mm (- 65 mm to + 65 mm), Z = 90 mm, Tilt = ?60° to +90°, Rotation : 360°
? Detectors Specifications
-SE Detector : Everhart-Thornley type
-In-Beam SE detector : Located in the SEM column
-Mid-Angle BSE detector : Second in-column detector
-LE-BSE detector mot. : scintillator type
-In-Beam f-BSE : scintillator-based back-scattered electron detector mounted in-column
-Beam Deceleration Technology(BDT) mode : Energy range is extended down to 50 eV
? Energy Dispersive X-ray Spectrometer
-NEW Bruker Energy Dispersive X- ray Spectrometer QUANTAX 200
-LN2-free high-speed Detector XFlash® 6
? Lithography System
-Elphy Quantum lithography system compatibility