W-CVD(텅스텐화학기상증착장치)

전자빔 증착장비
- 고출력 전자빔을 이용하여 Metal Source 를 증발시켜 Wafer(기판)표면에 증착시키는 장치

? Use : Silicon dioxide and silicon nitride
? Wafer size : 6 inch wafer
? Product wafer : Single wafer process
? Substrate temperature : RT ~ 400°C
? Ultimate pressure : ?5x10-6 Torr
? Source Process : SiH4, N2O, NH3, CF4
? RF generators : 13.56MHz and 400KHz
? Gas : line and cabinet installation with safety parts (automatic control)
? Scrubber : burn and wet type installation

? Source : RF 0.6kW (3 set)
? Main pressure : 7 ×10-7 torr
? Process pressure : 3×10-3 torr
? Target size : 3"
? Deposition temperature : 400 ℃ max.
? Chamber : Main & Loadlock
? Control type : Auto/PC Programmable
? Substrate : Max. 3" (from piece)

1. Process
? Thin film co-sputtering deposition
? Deposition metal : Metal, Al, W, Pt, Etc
? Substrate Size : 4 inch single wafer

2.Depostion method
? Magnetron sputtering deposition : 3 inch target
? Dc power : 0 ~ 1,000 W
? Source gas : Ar

3.Performance
? Base pressure : 8 x 10E-7 torr
? Throughput : 1 sheet/ batch
? Thickness uniformity : ≤± 3%
? Manual operation by PLC

? Use : Silicon dioxide and silicon nitride
? Wafer size : 6 inch wafer
? Product wafer : Single wafer process
? Substrate temperature : RT ~ 400°C
? Ultimate pressure : ?5x10-6 Torr
? Source Process : SiH4, N2O, CF4
? RF generators : 13.56MHz and 400KHz
? Gas : line and cabinet installation with safety parts (automatic control)
? Scrubber : burn and wet type installation